| PART |
Description |
Maker |
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PA7006 |
3.8?.2GHz 10W 40dB SOLID STATE POWER AMPLIFIER
|
MTRONPTI
|
| 1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4
Diode Zener Single 25V 5% 10W 2-Pin DO-4
Diode Zener Single 9.1V 5% 10W 2-Pin DO-4
Diode Zener Single 30V 5% 10W 2-Pin DO-4
Diode Zener Single 16V 5% 10W 2-Pin DO-4
Diode Zener Single 7.5V 5% 10W 2-Pin DO-4
Diode Zener Single 24V 5% 10W 2-Pin DO-4
Diode Zener Single 175V 20% 10W 2-Pin DO-4
Diode Zener Single 50V 5% 10W 2-Pin DO-4
Diode Zener Single 43V 5% 10W 2-Pin DO-4
Diode Zener Single 56V 5% 10W 2-Pin DO-4
Diode Zener Single 13V 5% 10W 2-Pin DO-4
Diode Zener Single 8.2V 5% 10W 2-Pin DO-4
Diode Zener Single 15V 5% 10W 2-Pin DO-4
Diode Zener Single 27V 5% 10W 2-Pin DO-4
Diode Zener Single 18V 5% 10W 2-Pin DO-4
Diode Zener Single 105V 5% 10W 2-Pin DO-4
Diode Zener Single 52V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 5% 10W 2-Pin DO-4
Diode Zener Single 51V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
| SY89833L SY89833LMITR SY89833LMI |
3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFC36V6472A04 MGFC36V6472A |
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V3742A04 MGFC36V3742A |
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V3742A C363742A |
From old datasheet system
3.7 - 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V6472A C366472A |
From old datasheet system
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| 2SC3904 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
